The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2020
Filed:
Jan. 02, 2020
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chih-Kai Hsu, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Chun-Ya Chiu, Tainan, TW;
Chi-Ting Wu, Tainan, TW;
Chin-Hung Chen, Tainan, TW;
Yu-Hsiang Lin, New Taipei, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7843 (2013.01); H01L 29/7846 (2013.01);
Abstract
A semiconductor device includes a gate structure on a fin-shaped structure, a single diffusion break (SDB) structure adjacent to the gate structure, a shallow trench isolation (STI) around the fin-shaped structure, and an isolation structure on the STI. Preferably, a top surface of the SDB structure is even with a top surface of the isolation structure, and the SDB structure includes a bottom portion in the fin-shaped structure and a top portion on the bottom portion.