The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2020

Filed:

Jan. 27, 2020
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Suvi P. Haukka, Helsinki, FI;

Fu Tang, Gilbert, AZ (US);

Michael E. Givens, Phoenix, AZ (US);

Jan Willem Maes, Wilrijk, BE;

Qi Xie, Leuven, BE;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/267 (2006.01); H01L 21/02 (2006.01); H01L 29/778 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/22 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02175 (2013.01); H01L 21/0228 (2013.01); H01L 21/0237 (2013.01); H01L 21/0262 (2013.01); H01L 21/02192 (2013.01); H01L 21/02194 (2013.01); H01L 21/02334 (2013.01); H01L 21/02557 (2013.01); H01L 21/02568 (2013.01); H01L 21/02661 (2013.01); H01L 21/28264 (2013.01); H01L 29/267 (2013.01); H01L 29/7786 (2013.01); H01L 21/02395 (2013.01); H01L 29/2203 (2013.01); H01L 29/66795 (2013.01); H01L 29/78 (2013.01);
Abstract

In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.


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