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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10851470 B1

PDFFull Text
Date of Patent:
Dec. 01, 2020

Filed:

Mar. 30, 2018

Silicon carbide crystal and method for manufacturing the same

Applicant:

Globalwafers Co., Ltd., Hsinchu, TW;

Inventors:

Ching-Shan Lin, Hsinchu, TW;

Jian-Hsin Lu, Hsinchu, TW;

Chien-Cheng Liou, Hsinchu, TW;

Man-Hsuan Lin, Hsinchu, TW;

Assignee:

GLOBALWAFERS CO., LTD., Hsinchu, TW;

Attorney:

Li & Cai Intellectual Property (USA) Office

Primary Examiner:

Hsin Yi Hsieh

Int. Cl.
CPC ...
C30B 29/36 (2006.01); C30B 23/02 (2006.01); H01L 29/16 (2006.01); H01L 29/36 (2006.01); C30B 23/00 (2006.01); H01L 29/32 (2006.01); H01L 21/02 (2006.01); C30B 25/02 (2006.01);
U.S. Cl.
CPC ...
C30B 23/025 (2013.01); C30B 23/005 (2013.01); C30B 25/02 (2013.01); C30B 29/36 (2013.01); H01L 21/0251 (2013.01); H01L 21/02378 (2013.01); H01L 21/02447 (2013.01); H01L 21/02507 (2013.01); H01L 21/02529 (2013.01); H01L 21/02576 (2013.01); H01L 21/02631 (2013.01); H01L 29/1608 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01);
Abstract

A silicon carbide crystal and a method for manufacturing the same are disclosed. The silicon carbide crystal includes a seed layer, a bulk layer, and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer, and the stress buffering structure are each formed with a dopant that cycles between high and low concentration. Therefore, the crystal defects can be significantly reduced.

Find Patent Forward Citations

Lin, Ching-Shan. (2020). Silicon carbide crystal and method for manufacturing the same (U.S. Patent No. 10851470). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10851470

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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