The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Jan. 31, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Te-En Cheng, Taoyuan, TW;
Chun-Te Li, Kaohsiung, TW;
Kai-Hsuan Lee, Hsinchu, TW;
Tien-I Bao, Taoyuan, TW;
Wei-Ken Lin, Tainan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/84 (2006.01); H01L 21/28 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); H01L 27/12 (2006.01); H01L 29/165 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/28088 (2013.01); H01L 21/32053 (2013.01); H01L 21/32133 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01); H01L 29/4916 (2013.01); H01L 29/66545 (2013.01); H01L 29/7845 (2013.01); H01L 29/7851 (2013.01); H01L 21/0228 (2013.01); H01L 21/02126 (2013.01); H01L 21/02211 (2013.01); H01L 29/165 (2013.01); H01L 29/7848 (2013.01);
Abstract
Field effect transistor and methods of forming the same are disclosed. The field effect transistor includes a gate electrode, a contact etch stop layer (CESL), an inter layer dielectric (ILD) and a protection layer. The CESL includes SiCON and is disposed on a sidewall of the gate electrode. The IDL is laterally adjacent to the gate electrode. The protection layer covers the CESL and is disposed between the CESL and the ILD.