The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Jan. 23, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method of forming a semiconductor structure includes etching a substrate to define a plurality of trench arrays in the substrate, wherein each trench array of the plurality of trench arrays includes an outer trench extending along a periphery of each trench array of the plurality of trench array and a plurality of inner trenches, the outer trench has a width greater than a width of each of the plurality of inner trenches. The method includes depositing a first conductive layer in each trench array of the plurality of trench arrays, and on a top surface of the substrate. The method includes depositing a dielectric layer over the first conductive layer. The method includes depositing a second conductive layer over the dielectric layer. The method includes patterning the second conductive layer, the dielectric layer and the first conductive layer to form a capacitor.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile