The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Jun. 25, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Jyun-Lin Wu, Hsinchu, TW;

Liang-Chen Lin, Hsinchu County, TW;

Shiang-Ruei Su, Hsinchu County, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2006.01);
U.S. Cl.
CPC ...
H01L 24/81 (2013.01); H01L 24/13 (2013.01); H01L 25/0657 (2013.01); H01L 2224/1357 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/13647 (2013.01); H01L 2224/81048 (2013.01); H01L 2224/8181 (2013.01); H01L 2924/0132 (2013.01);
Abstract

The present disclosure provides a semiconductor structure, including providing a first chip, disposing a first copper layer having a first thickness over a first side of the first chip, and disposing a first solder having a second thickness over the first copper layer, wherein a ratio of the second thickness and the first thickness is in a range of from about 2 to about 3.5.


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