The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 2020

Filed:

Feb. 05, 2018
Applicant:

Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;

Inventors:

Guo-Cheng Liao, Kaohsiung, TW;

Chia Ching Chen, Kaohsiung, TW;

Yi Chuan Ding, Kaohsiung, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 23/552 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5389 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/6835 (2013.01); H01L 23/3114 (2013.01); H01L 23/3135 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 23/552 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/214 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19105 (2013.01); H01L 2924/3025 (2013.01);
Abstract

A semiconductor package structure includes a first conductive structure, a second conductive structure, a first semiconductor component, a second semiconductor component and a first encapsulant. The first semiconductor component is disposed on the first conductive structure. The first conductive structure includes a first redistribution layer. The second semiconductor component is disposed on the second conductive structure. The second conductive structure includes a second redistribution layer, and the first conductive structure is electrically connected to the second conductive structure. The first encapsulant covers the first semiconductor component and the first conductive structure. A lateral surface of the first conductive structure and a lateral surface of the first encapsulant are non-coplanar.


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