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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10847445 B1

PDFFull Text
Date of Patent:
Nov. 24, 2020

Filed:

Mar. 31, 2017

Non-symmetric body contacts for field-effect transistors

Applicant:

Skyworks Solutions, Inc., Woburn, MA (US);

Inventors:

Hailing Wang, Acton, MA (US);

Dylan Charles Bartle, Arlington, MA (US);

Hanching Fuh, Allston, MA (US);

David Scott Whitefield, Andover, MA (US);

Paul T. DiCarlo, Marlborough, MA (US);

Assignee:

SKYWORKS SOLUTIONS, INC., Irvine, CA (US);

Attorney:

Chang & Hale LLP

Primary Examiner:

Ismail A Muse

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 23/482 (2006.01); H01L 23/66 (2006.01); H01L 27/02 (2006.01); H01L 29/10 (2006.01); H01L 21/74 (2006.01); H01L 29/786 (2006.01); H01L 29/417 (2006.01); H04B 1/40 (2015.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 23/482 (2013.01); H01L 21/743 (2013.01); H01L 23/4824 (2013.01); H01L 23/4825 (2013.01); H01L 23/66 (2013.01); H01L 27/0203 (2013.01); H01L 27/0207 (2013.01); H01L 27/1203 (2013.01); H01L 29/1087 (2013.01); H01L 29/41733 (2013.01); H01L 29/78615 (2013.01); H01L 29/78654 (2013.01); H04B 1/40 (2013.01); H01L 21/82385 (2013.01); H01L 21/823456 (2013.01); H01L 2223/6677 (2013.01); H01L 2924/1421 (2013.01);
Abstract

Field-effect transistor (FET) devices are described herein that include one or more body contacts implemented near source, gate, drain (S/G/D) assemblies to improve the influence of a voltage applied at the body contact on the S/G/D assemblies. For example, body contacts can be implemented between S/G/D assemblies rather than on the ends of such assemblies. This can advantageously improve body contact influence on the S/G/D assemblies while maintaining a targeted size for the FET device.

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