The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Sep. 13, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Shen-Nan Lee, Hsinchu County, TW;
Teng-Chun Tsai, Hsinchu, TW;
Chen-Hao Wu, Keelung, TW;
Chu-An Lee, Hsinchu, TW;
Chun-Hung Liao, Taichung, TW;
Tsung-Ling Tsai, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of manufacturing a semiconductor structure includes: forming a dielectric layer over a conductive layer; removing a portion of the dielectric layer to form an opening exposing a portion of the conductive layer; filling a ruthenium-containing material in the opening and in contact with the dielectric layer; and polishing the ruthenium-containing material using a slurry including an abrasive and an oxidizer selected from the group consisting of hydrogen peroxide (HO), potassium periodate (KIO), potassium iodate (KIO), potassium permanganate (KMnO), iron(III) nitrate (FeNO) and a combination thereof.