The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2020
Filed:
Feb. 11, 2020
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Han Wang, Leuven, BE;
Qi Xie, Leuven, BE;
Delphine Longrie, Ghent, BE;
Jan Willem Maes, Wilrijk, BE;
David de Roest, Kessel-Lo, BE;
Julian Hsieh, Zhubei, TW;
Chiyu Zhu, Helsinki, FI;
Timo Asikainen, Helsinki, FI;
Assignee:
ASM IP HOLDING B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/283 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02178 (2013.01); H01L 21/0228 (2013.01); H01L 21/02205 (2013.01); H01L 21/283 (2013.01); H01L 21/31144 (2013.01);
Abstract
Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.