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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10840154 B1

PDFFull Text
Date of Patent:
Nov. 17, 2020

Filed:

Jul. 27, 2018

Method for forming semiconductor structure with high aspect ratio

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Han-Pin Chung, Kaohsiung, TW;

Chih-Tang Peng, Zhubei, TW;

Tien-I Bao, Taoyuan, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING CO.. LTD., Hsinchu, TW;

Attorney:

McClure, Qualey & Rodack, LLP

Primary Examiner:

Dale E Page

Assistant Examiner:

Quovaunda Jefferson

Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823878 (2013.01); H01L 21/0223 (2013.01); H01L 21/02252 (2013.01); H01L 21/02255 (2013.01); H01L 21/02271 (2013.01); H01L 21/76229 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/66545 (2013.01); H01L 29/7846 (2013.01); H01L 21/0234 (2013.01); H01L 21/02323 (2013.01); H01L 21/02337 (2013.01); H01L 21/02348 (2013.01); H01L 21/845 (2013.01); H01L 29/41791 (2013.01); H01L 29/7843 (2013.01);
Abstract

A semiconductor structure and a method for forming the same are provided. The method includes forming a first insulation material layer in a portion of a trench between a first protruding structure and a second protruding structure over a substrate and performing a pre-treatment process on the first insulation material layer. The method further includes performing a first insulation material conversion process on the first insulation material layer and forming a second insulation material layer covering the first insulation material layer in the trench. In addition, a first distance between upper portions of the first protruding structure and the second protruding structure before performing the first insulation material conversion process is different from a second distance between the upper portions of the first protruding structure and the second protruding structure after performing the first insulation material conversion process.

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