The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Oct. 23, 2019
Applicant:
Disco Corporation, Tokyo, JP;
Inventors:
Kentaro Iizuka, Tokyo, JP;
Naoki Omiya, Tokyo, JP;
Assignee:
DISCO CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B23K 26/53 (2014.01); B23K 26/38 (2014.01); B23K 26/08 (2014.01); H01L 21/673 (2006.01); H01L 21/677 (2006.01); H01L 21/304 (2006.01); B28D 5/00 (2006.01); B24B 7/22 (2006.01); H01L 21/67 (2006.01); B23K 26/10 (2006.01); B23K 26/00 (2014.01); B24B 27/00 (2006.01); B24D 3/00 (2006.01); B23K 101/40 (2006.01); B23K 103/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67155 (2013.01); B23K 26/0006 (2013.01); B23K 26/0093 (2013.01); B23K 26/083 (2013.01); B23K 26/0838 (2013.01); B23K 26/0869 (2013.01); B23K 26/10 (2013.01); B23K 26/38 (2013.01); B23K 26/53 (2015.10); B24B 7/228 (2013.01); B24B 27/0069 (2013.01); B28D 5/0082 (2013.01); H01L 21/304 (2013.01); H01L 21/6732 (2013.01); H01L 21/6773 (2013.01); H01L 21/67173 (2013.01); H01L 21/67219 (2013.01); H01L 21/67346 (2013.01); H01L 21/67706 (2013.01); H01L 21/67766 (2013.01); H01L 21/67769 (2013.01); H01L 21/67778 (2013.01); B23K 2101/40 (2018.08); B23K 2103/56 (2018.08); B24D 3/00 (2013.01); H01L 21/67092 (2013.01); Y10T 29/5139 (2015.01); Y10T 29/5143 (2015.01); Y10T 29/5196 (2015.01);
Abstract
A wafer producing apparatus includes an ingot grinding unit that grinds the upper surface of an ingot to planarize the upper surface, a laser irradiation unit that positions the focal point of a laser beam with such a wavelength as to be transmitted through the ingot to a depth corresponding to the thickness of a wafer to be produced from the upper surface of the ingot and irradiates the ingot with the laser beam to form a separation layer, a wafer separating unit that separates the wafer from the ingot, and a tray having a support part that supports the separated wafer.