The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Dec. 11, 2018
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

David W. Abraham, Croton, NY (US);

John M. Cotte, New Fairfield, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/32 (2006.01); H01L 21/76 (2006.01); H01L 23/48 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 21/288 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53285 (2013.01); H01L 21/02068 (2013.01); H01L 21/2885 (2013.01); H01L 21/32058 (2013.01); H01L 21/32133 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 24/08 (2013.01); H01L 24/89 (2013.01); H01L 2224/08146 (2013.01); H01L 2224/80203 (2013.01); H01L 2225/06541 (2013.01);
Abstract

A semiconductor structure and methods of forming the semiconductor structure generally includes providing a thermocompression bonded superconducting metal layer sandwiched between a first silicon substrate and a second silicon substrate. The second substrate includes a plurality of through silicon vias to the thermocompression bonded superconducting metal layer. A second superconducting metal is electroplated into the through silicon vias using the thermocompression bonded superconducting metal layer as a bottom electrode during the electroplating process, wherein the filling is from the bottom upwards.


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