The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2020
Filed:
Jun. 23, 2017
Applicant:
Intel Corporation, Santa Clara, CA (US);
Inventors:
Hui Jae Yoo, Hillsboro, OR (US);
Tejaswi K. Indukuri, Boise, ID (US);
Ramanan V. Chebiam, Hillsboro, OR (US);
James S. Clarke, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76849 (2013.01); H01L 21/76838 (2013.01); H01L 21/76877 (2013.01); H01L 21/76882 (2013.01); H01L 23/53209 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53238 (2013.01); H01L 23/53242 (2013.01); H01L 23/53252 (2013.01); H01L 23/53257 (2013.01); H01L 23/53266 (2013.01); H01L 21/76843 (2013.01); H01L 2224/45015 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A dielectric layer and a method of forming thereof. An opening defined in a dielectric layer and a wire deposited within the opening, wherein the wire includes a core material surrounded by a jacket material, wherein the jacket material exhibits a first resistivity ρ1 and the core material exhibits a second resistivity ρ2 and ρ2 is less than ρ1.