The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 10, 2020

Filed:

Jan. 03, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Ren Cheng, Hsin-Chu, TW;

Richard Yen, Hsin-Chu County, TW;

Yi-Hsien Chang, Changhua County, TW;

Wei-Cheng Shen, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); B81B 3/00 (2006.01); B81C 3/00 (2006.01); H04R 1/06 (2006.01); H04R 17/00 (2006.01); H04R 17/02 (2006.01);
U.S. Cl.
CPC ...
B81B 3/0021 (2013.01); B81B 3/007 (2013.01); B81C 3/001 (2013.01); H04R 1/06 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0127 (2013.01); H04R 17/00 (2013.01); H04R 17/02 (2013.01); H04R 2201/003 (2013.01);
Abstract

A method includes the following operations: forming a piezoelectric substrate including a piezoelectric structure and a conductive contact structure, in which the piezoelectric structure has a conductive layer and a piezoelectric layer in contact with the conductive layer, and the conductive contact structure is electrically connected to the piezoelectric structure and protrudes beyond a principal surface of the piezoelectric substrate; forming a semiconductor substrate having a conductive receiving feature and a semiconductor device electrically connected thereto; aligning the conductive contact structure of the piezoelectric substrate with the conductive receiving feature of the semiconductor substrate; and bonding the piezoelectric substrate with the semiconductor substrate such that the conductive contact structure is in contact with the conductive receiving feature.


Find Patent Forward Citations

Loading…