The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Sep. 18, 2019
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Dennis M. Hausmann, Lake Oswego, OR (US);

Alexander R. Fox, Portland, OR (US);

Colleen Lawlor, Clinton, NY (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/67 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01); C23C 16/40 (2006.01); C23C 16/50 (2006.01); H01L 21/768 (2006.01); H01L 21/321 (2006.01); H01L 21/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02233 (2013.01); C23C 16/401 (2013.01); C23C 16/45527 (2013.01); C23C 16/45544 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01L 21/0228 (2013.01); H01L 21/02126 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/02304 (2013.01); H01L 21/321 (2013.01); H01L 21/76897 (2013.01); H01L 21/32 (2013.01); H01L 21/67207 (2013.01);
Abstract

Methods and apparatuses for selectively depositing silicon oxide on surfaces relative to a metal-containing surface such as copper are provided. Methods involve exposing a substrate having hydroxyl-terminated or dielectric surfaces and copper surfaces to a copper-blocking reagent such as an alkyl thiol to selectively adsorb to the copper surface, exposing the substrate to a silicon-containing precursor for depositing silicon oxide, exposing the substrate to a weak oxidant gas and igniting a plasma, or water vapor without plasma, to convert the adsorb silicon-containing precursor to form silicon oxide. Some methods also involve exposing the substrate to a reducing agent to reduce any oxidized copper from exposure to the weak oxidant gas.


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