The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2020
Filed:
Oct. 24, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70641 (2013.01);
Abstract
A method includes reducing refractive index of an environment at or adjacent an extreme ultraviolet (EUV) mask to below 1.0. The EUV mask is in an EUV lithography system that forms a projection beam of EUV radiation using EUV radiation emitted from a radiation source. The method further includes exposing the EUV mask to the projection beam of EUV radiation.
Quick Actions:
Shih, Chih-Tsung. (2020). Method to reduce native defect printability (U.S. Patent No. 10824080). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10824080
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