The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Dec. 19, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Chin-Wei Liang, Hsinchu County, TW;
Hsing-Lien Lin, Hsin-Chu, TW;
Cheng-Yuan Tsai, Hsin-Chu county, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/42 (2006.01); H01L 27/146 (2006.01); H01L 31/0256 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
H01L 51/4293 (2013.01); H01L 51/4273 (2013.01); H01L 51/0037 (2013.01); H01L 51/0038 (2013.01); H01L 2251/306 (2013.01); Y02E 10/549 (2013.01); Y02P 70/521 (2015.11);
Abstract
The present disclosure provides a photosensitive device. The photosensitive device includes a donor-intermix-acceptor (PIN) structure. The PIN structure includes an organic hole transport layer; an organic electron transport layer; and an intermix layer sandwiched between the hole transport organic material layer and the electron transport organic material layer. The intermix layer includes a mixture of an n-type organic material and a p-type organic material.