The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Oct. 11, 2019
International Business Machines Corporation, Armonk, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Nicolas Loubet, Guilderland, NY (US);
Ruilong Xie, Schenectady, NY (US);
Tenko Yamashita, Schenectady, NY (US);
Chun-Chen Yeh, Clifton Park, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A substrate structure having a set of nanosheet layers and a set of sacrificial layers stacked upon a substrate is received and a dummy gate is formed upon the nanosheet layers and the sacrificial layers. A portion of a subset of the set of sacrificial layers and a subset of the set of nanosheet layers is etched. A portion of a subset of the subset of sacrificial layers is etched to create divots within the sacrificial layers. A divot fill layer is deposited. The divot fill layer is etched to form an inner spacer between the nanosheet layers. A source/drain region is formed adjacent to the nanosheet layers and the divots. A remaining portion of the subset of the sacrificial layers is removed. The subset of the nanosheet layers is etched to a desired channel thickness producing faceted surfaces between the subset of nanosheet layers and the inner spacer.