The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Dec. 30, 2017
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Andrew W. Yeoh, Portland, OR (US);

Ilsup Jin, Hillsboro, OR (US);

Angelo Kandas, Portland, OR (US);

Michael L. Hattendorf, Portland, OR (US);

Christopher P. Auth, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 29/165 (2006.01); H01L 29/417 (2006.01); H01L 21/033 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/8238 (2006.01); H01L 23/528 (2006.01); H01L 27/092 (2006.01); H01L 27/11 (2006.01); H01L 49/02 (2006.01); H01L 29/08 (2006.01); H01L 29/51 (2006.01); H01L 27/02 (2006.01); H01L 21/02 (2006.01); H01L 29/167 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/0337 (2013.01); H01L 21/28247 (2013.01); H01L 21/28518 (2013.01); H01L 21/28568 (2013.01); H01L 21/3086 (2013.01); H01L 21/31105 (2013.01); H01L 21/31144 (2013.01); H01L 21/76224 (2013.01); H01L 21/76232 (2013.01); H01L 21/76801 (2013.01); H01L 21/76802 (2013.01); H01L 21/76816 (2013.01); H01L 21/76834 (2013.01); H01L 21/76846 (2013.01); H01L 21/76849 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 21/823871 (2013.01); H01L 21/823878 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/5329 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 27/0207 (2013.01); H01L 27/0886 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 27/1104 (2013.01); H01L 28/20 (2013.01); H01L 28/24 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/41783 (2013.01); H01L 29/41791 (2013.01); H01L 29/516 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/66818 (2013.01); H01L 29/785 (2013.01); H01L 29/7843 (2013.01); H01L 29/7845 (2013.01); H01L 29/7846 (2013.01); H01L 29/7848 (2013.01); H01L 29/7851 (2013.01); H01L 29/7854 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/0332 (2013.01); H01L 21/76883 (2013.01); H01L 21/76885 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/73 (2013.01); H01L 29/665 (2013.01); H01L 29/7842 (2013.01); H01L 29/7853 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01);
Abstract

Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the resulting structures. In an example, an integrated circuit structure includes an inter-layer dielectric (ILD) layer above a substrate. A conductive interconnect line is in a trench in the ILD layer, the conductive interconnect line having a first portion and a second portion, the first portion laterally adjacent to the second portion. A dielectric plug is between and laterally adjacent to the first and second portions of the conductive interconnect line, the dielectric plug comprising a metal oxide material.


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