The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
May. 07, 2019
Globalfoundries Inc., Grand Cayman, KY;
Anthony K. Stamper, Williston, VT (US);
Steven M. Shank, Jericho, VT (US);
Michel J. Abou-Khalil, Essex Junction, VT (US);
Siva P. Adusumilli, South Burlington, VT (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
Structures for a field-effect transistor and methods of forming a field-effect transistor. A first gate electrode has a first plurality of segments arranged in series to define a first non-rectilinear chain. A second gate electrode is arranged adjacent to the first gate electrode. The second gate electrode includes a second plurality of segments arranged in series to define a second non-rectilinear chain. A source/drain region is laterally arranged between the first gate electrode and the second gate electrode.