The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2020

Filed:

Apr. 22, 2019
Applicant:

Deca Technologies Inc., Tempe, AZ (US);

Inventors:

Timothy L. Olson, Phoenix, AZ (US);

Christopher M. Scanlan, Chandler, AZ (US);

Assignee:

DECA TECHNOLOGIES INC., Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 21/48 (2006.01); H01L 21/683 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 24/96 (2013.01); H01L 21/486 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 21/78 (2013.01); H01L 24/05 (2013.01); H01L 24/19 (2013.01); H01L 24/94 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68372 (2013.01); H01L 2224/95001 (2013.01);
Abstract

A method of making a semiconductor device can include providing a semiconductor die comprising a front surface comprising a gate pad and a source pad, the semiconductor die further comprising a back surface opposite the front surface, the back surface comprising a drain. A gate stud may be formed over and coupled to the gate pad. A source stud may be formed over and coupled to the source pad. An encapsulant may be formed over the semiconductor die. A through mold interconnect may extend between opposing first and second surfaces of the encapsulant. An RDL may be coupled to the gate stud, the source stud, and to the through mold interconnect. A land pad may be formed over the back surface of the semiconductor die and be coupled to the drain after singulating the semiconductor die from its native wafer and after forming the encapsulant over the semiconductor die.


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