The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Apr. 13, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yen-Hsung Ho, Taoyuan County, TW;
Chia-Yi Tseng, Tainan, TW;
Chih-Hsun Lin, Tainan, TW;
Kun-Tsang Chuang, Miaoli County, TW;
Yung-Lung Hsu, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor structure includes forming first and second features in a scribe region of a semiconductor substrate in which the first feature has a first electrical resistance, the second feature has a second electrical resistance, and the first electrical resistance is different form the second electrical resistance; forming an interlayer dielectric layer over the first and second features; and forming a first contact in the interlayer dielectric layer and connected to the first feature and a second contact in the interlayer dielectric layer and connected to the second feature.