The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2020
Filed:
Jun. 12, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/02164 (2013.01); H01L 21/02304 (2013.01); H01L 21/02312 (2013.01); H01L 21/3247 (2013.01); H01L 21/762 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01);
Abstract
A method for manufacturing a semiconductor structure is provided. A plurality of trenches are formed in a substrate. The trenches define at least one fin therebetween. The fin is hydrogen annealed. A dielectric material is formed in the trenches. The dielectric material in the trenches is recessed.