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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10818556 B1

PDFFull Text
Date of Patent:
Oct. 27, 2020

Filed:

Dec. 17, 2018

Method for forming a semiconductor structure

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Hao-Yeh Liu, Kaohsiung, TW;

Jia-Feng Fang, Changhua County, TW;

Yu-Hsiang Lin, New Taipei, TW;

Ching-Hsiang Chiu, Yilan County, TW;

Chia-Wei Liu, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorney:

Winston Hsu

Primary Examiner:

Mounir S Amer

Assistant Examiner:

Alexander Belousov

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/0228 (2013.01); H01L 21/02233 (2013.01); H01L 21/3105 (2013.01); H01L 21/31053 (2013.01); H01L 21/31111 (2013.01); H01L 21/76224 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 21/0274 (2013.01);
Abstract

A method for forming a semiconductor structure is provided. Multiple fins extending along a first direction are formed in a semiconductor substrate. The multiple fins includes a group of active fins, a pair of protection fins sandwiching about the group the active fins, and at least one dummy fin around the pair of protection fins. A fin cut process is performed to remove the at least one dummy fin around the pair of protection fins. After performing the fin cut process, trench isolation structures are formed within the trenches between the multiple fins. The trench isolation structures are subjected to an anneal process. After annealing the trench isolation structures, the pair of protection fins is removed.

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