The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Dec. 26, 2018
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Binghua Hu, Plano, TX (US);

Alexei Sadovnikov, Sunnyvale, CA (US);

Abbas Ali, Plano, TX (US);

Yanbiao Pan, Plano, TX (US);

Stefan Herzer, Marzling, DE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/94 (2006.01); H01L 29/08 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/945 (2013.01); H01L 21/823814 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/42368 (2013.01); H01L 29/66712 (2013.01);
Abstract

A semiconductor device with an isolation structure and a trench capacitor, each formed using a single resist mask for etching corresponding first and second trenches of different widths and different depths, with dielectric liners formed on the trench sidewalls and polysilicon filling the trenches and deep doped regions surrounding the trenches, including conductive features of a metallization structure that connect the polysilicon of the isolation structure trench to the deep doped region to form an isolation structure.


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