The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

Jul. 13, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Che-Yu Lin, Hsinchu, TW;

Ming-Hua Yu, Hsinchu, TW;

Tze-Liang Lee, Hsinchu, TW;

Chan-Lon Yang, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/167 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 23/544 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/02057 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 21/76229 (2013.01); H01L 23/544 (2013.01); H01L 29/0649 (2013.01); H01L 29/1033 (2013.01); H01L 29/167 (2013.01); H01L 29/66795 (2013.01); H01L 29/7848 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01);
Abstract

A device includes a semiconductor substrate, an isolation structure, and an epitaxial fin portion. The semiconductor substrate has an implanted region. The implanted region has a bottom fin portion thereon, in which a depth of the implanted region is smaller than a thickness of the semiconductor substrate. The isolation structure surrounds the bottom fin portion. The epitaxial fin portion is disposed over a top surface of the bottom fin portion, in which the implanted region of the semiconductor substrate includes oxygen and has an oxygen concentration lower than about 1·E+19 atoms/cm.


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