The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2020
Filed:
Apr. 18, 2019
Macronix International Co., Ltd., Hsinchu, TW;
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a substrate, conductive layers, dielectric layers, an isolation structure, a first memory structure, and a second memory structure. The conductive layers and the dielectric layers are interlaced and stacked on the substrate. The isolation structure is disposed on the substrate and through the conductive layers and the dielectric layers. Each of the first and second memory structures has a radius of curvature. The first and second memory structures penetrate through the conductive layers and the dielectric layers and are disposed on opposite sidewalls of the isolation structure. Each of the first and second memory structures includes protecting structures and a memory structure layer including a memory storage layer. The protecting structures are disposed at two ends of the memory storage layer, and an etching selectivity to the protecting structures is different from an etching selectivity to the memory storage layer.