The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 2020

Filed:

May. 10, 2018
Applicants:

International Business Machines Corporation, Armonk, NY (US);

Ulvac, Inc., Kanagawa, JP;

Inventors:

Fabio Carta, Pleasantville, NY (US);

Takeshi Masuda, Ossining, NY (US);

Gloria W. Y. Fraczak, Queens, NY (US);

Robert Bruce, White Plains, NY (US);

Norma Edith Sosa, Ossining, NY (US);

Matthew J. BrightSky, Pound Ridge, NY (US);

Assignees:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/30 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45531 (2013.01); C23C 16/305 (2013.01); C23C 16/45553 (2013.01); G11C 13/0004 (2013.01); H01L 45/06 (2013.01); H01L 45/1253 (2013.01); H01L 45/1616 (2013.01); H01L 45/1675 (2013.01); H01L 45/1691 (2013.01);
Abstract

A method of forming a phase change material is provided in which the crystalline state resistance of the material can be controlled through controlling the flow ratio of NH/Ar. The method may include providing a flow modulated chemical vapor deposition apparatus. The method may further include flowing gas precursors into the flow modulated chemical vapor deposition apparatus to provide the base material components of the phase change material. The method further includes flowing a co-reactant precursor and an inert gas into the flow modulated chemical vapor deposition, wherein adjusting ratio of the co-reactant precursor to the inert gas adjusts the crystalline state resistance of the phase change material.


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