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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10804106 B1

PDFFull Text
Expired
Date of Patent:
Oct. 13, 2020

Filed:

Feb. 21, 2018

High temperature ultra-fast annealed soft mask for semiconductor devices

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Mona Ebrish, Albany, NY (US);

Oleg Gluschenkov, Tannersville, NY (US);

Indira Seshadri, Niskayuna, NY (US);

Ekmini Anuja De Silva, Slingerlands, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorney:

Amin, Turocy & Watson, LLP

Primary Examiner:

Caleb E Henry

Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/225 (2006.01); H01L 21/268 (2006.01); H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2254 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/02318 (2013.01); H01L 21/0332 (2013.01); H01L 21/268 (2013.01); H01L 21/26513 (2013.01); H01L 21/823431 (2013.01);
Abstract

Techniques for providing a high temperature soft mask for semiconductor devices are described. In an embodiment, spin coating semiconductor device components with organic planarization material having a defined aromatic content aromatic content to provide an organic planarization layer. The method can further comprise ultra-fast annealing the organic planarization layer and forming an implanted or doped region in the semiconductor device. Three-dimensional FinFET components of a device can be spin coated with organic planarization material having high aromatic content, with the device cured at a first temperature. The organic planarization layer can be ultra-fast annealed at a second temperature that is greater than the first temperature. Aspects can include patterning the device, and forming an implanted or doped region in a semiconductor device.

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Ebrish, Mona. (2020). High temperature ultra-fast annealed soft mask for semiconductor devices (U.S. Patent No. 10804106). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10804106

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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