The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Oct. 16, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Lei Sun, Altamont, NY (US);
Obert R. Wood, II, New York, NY (US);
Genevieve Beique, Clifton Park, NY (US);
Yulu Chen, West Sand Lake, NY (US);
Erik Verduijn, Leuven, BE;
Francis Goodwin, Halfmoon, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/58 (2012.01); G03F 1/80 (2012.01);
U.S. Cl.
CPC ...
G03F 1/24 (2013.01); G03F 1/58 (2013.01); G03F 1/80 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.