The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2020
Filed:
Oct. 01, 2018
United Microelectronics Corp., Hsinchu, TW;
Ya-Sheng Feng, Tainan, TW;
Yu-Chun Chen, Kaohsiung, TW;
Chiu-Jung Chiu, Tainan, TW;
Hung-Chan Lin, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A magnetoresistive memory cell is provided including a substrate. An inter-layer dielectric layer is disposed on the substrate. A via structure is disposed in the inter-layer dielectric layer. A magnetic pinned layer is disposed on the via structure. A tunnel barrier layer is disposed on the magnetic pinned layer to cover a top and a sidewall of the magnetic pinned layer, wherein the tunnel barrier layer comprises a horizontal extending portion outward from a bottom of the sidewall. A magnetic free layer with a-like structure is disposed on the tunnel barrier layer, wherein the magnetic free layer is isolated from the magnetic pinned layer by the tunnel bather layer. A spacer is disposed on the sidewall of the magnetic free layer. The spacer extends to the inter-layer dielectric layer.