The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 06, 2020

Filed:

Apr. 22, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Volume Chien, Tainan, TW;

Yun-Wei Cheng, Taipei, TW;

Shiu-Ko Jangjian, Tainan, TW;

Zhe-Ju Liu, Taoyuan, TW;

Kuo-Cheng Lee, Tainan, TW;

Chi-Cherng Jeng, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0232 (2014.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
H01L 27/14623 (2013.01); H01L 27/1462 (2013.01); H01L 27/14621 (2013.01); H01L 27/14625 (2013.01); H01L 27/14627 (2013.01); H01L 27/14629 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01); H01L 31/0232 (2013.01); H01L 31/02164 (2013.01);
Abstract

An image sensor device is provided. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate. The image sensor device further includes a filter partially surrounded by the dielectric layer. The filter has a protruding portion protruding from a bottom surface of the dielectric layer. In addition, the image sensor device includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the protruding portion of the filter.


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