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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10796954 B1

PDFFull Text
Date of Patent:
Oct. 06, 2020

Filed:

Feb. 21, 2019

Semiconductor structure and method for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Gung-Pei Chang, Taipei, TW;

Yao-Wen Chang, Taipei, TW;

Hai-Dang Trinh, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;

Attorneys:

WPAT, P.C., Intellectual Property Attorneys

Anthony King

Primary Examiner:

Theresa T Doan

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 21/768 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76847 (2013.01); H01L 21/0228 (2013.01); H01L 21/02118 (2013.01); H01L 21/02178 (2013.01); H01L 21/02274 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 21/31116 (2013.01); H01L 21/76802 (2013.01); H01L 21/76831 (2013.01); H01L 24/05 (2013.01); H01L 24/13 (2013.01); H01L 24/83 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13644 (2013.01); H01L 2224/8385 (2013.01); H01L 2224/83805 (2013.01);
Abstract

A semiconductor structure includes a first substrate, a metallic pad disposed over the first substrate, a dielectric structure disposed over the first substrate and exposing a portion of the metallic pad, a bonding structure disposed over and electrically connected to the metallic pad, a barrier ring surrounding the bonding structure, and a through-hole penetrating the first substrate and the dielectric structure. The bonding structure includes a bottom and a sidewall, the bottom of the bonding structure is in contact with the metallic pad, a first portion of the sidewall of the bonding structure is in contact with the dielectric structure, and a second portion of the sidewall of the bonding structure is in contact with the barrier ring.

Find Patent Forward Citations

Chang, Gung-Pei. (2020). Semiconductor structure and method for forming the same (U.S. Patent No. 10796954). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10796954

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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