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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10790184 B1

PDFFull Text
Date of Patent:
Sep. 29, 2020

Filed:

Dec. 06, 2018

Isolation with multi-step structure for finfet device and method of forming the same

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ta-Chun Lin, Hsinchu, TW;

Tien-Shao Chuang, Hsinchu, TW;

Kuang-Cheng Tai, Hsinchu, TW;

Chun-Hung Chen, Hsinchu, TW;

Chih-Hung Hsieh, Hsin-Chu, TW;

Kuo-Hua Pan, Hsinchu, TW;

Jhon-Jhy Liaw, Zhudong Township, Hsinchu County, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Daniel P Shook

Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76232 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 27/0928 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate including a first well region and a second well region that have different conductivity types and are adjacent to each other. A first fin structure protrudes from the semiconductor substrate and is formed in the first well region. A second fin structure protrudes from the semiconductor substrate and is formed in the second well region and adjacent to the first fin structure. A first multi-step isolation structure that includes a first isolation portion is formed between the first fin structure and the second fin structure. A second isolation portion extends from the bottom surface of the first isolation portion. The second isolation portion has a top width that is narrower than the bottom width of the first isolation portion.

Find Patent Forward Citations

Lin, Ta-Chun. (2020). Isolation with multi-step structure for finfet device and method of forming the same (U.S. Patent No. 10790184). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10790184

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