The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2020

Filed:

Apr. 22, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Yue Guo, Redwood City, CA (US);

Yang Yang, San Diego, CA (US);

Kartik Ramaswamy, San Jose, CA (US);

Kenneth S. Collins, San Jose, CA (US);

Steven Lane, Porterville, CA (US);

Gonzalo Monroy, San Francisco, CA (US);

Lucy Zhiping Chen, Santa Clara, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01J 37/305 (2006.01); H01J 37/32 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01J 37/3053 (2013.01); H01J 37/321 (2013.01); H01J 37/3255 (2013.01); H01J 37/3266 (2013.01); H01J 37/32082 (2013.01); H01J 37/32091 (2013.01); H01J 37/32137 (2013.01); H01J 37/32697 (2013.01); H01L 21/32136 (2013.01); H01J 2237/152 (2013.01); H01J 2237/3151 (2013.01); H01J 2237/3341 (2013.01);
Abstract

Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.


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