The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Oct. 02, 2017
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Jiun-Yi Wu, Taoyuan, TW;
Chien-Hsun Lee, Hsinchu County, TW;
Chewn-Pu Jou, Hsinchu, TW;
Fu-Lung Hsueh, Kaohsiung, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05K 1/02 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 23/552 (2006.01); H05K 1/11 (2006.01); H05K 3/00 (2006.01); H05K 3/40 (2006.01); H05K 3/42 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H05K 1/0216 (2013.01); H01L 21/485 (2013.01); H01L 21/486 (2013.01); H01L 21/76805 (2013.01); H01L 23/49827 (2013.01); H01L 23/552 (2013.01); H05K 1/024 (2013.01); H05K 1/0222 (2013.01); H05K 1/113 (2013.01); H05K 1/115 (2013.01); H05K 3/0047 (2013.01); H05K 3/4007 (2013.01); H05K 3/423 (2013.01); H05K 1/0245 (2013.01); H05K 3/4038 (2013.01); H05K 3/42 (2013.01); H05K 2201/0723 (2013.01); H05K 2201/0959 (2013.01); H05K 2201/09545 (2013.01); H05K 2201/09645 (2013.01); Y10T 29/49165 (2015.01);
Abstract
A method for manufacturing an interconnect structure is provided. The method includes the following steps. An opening is through a substrate. A low-k dielectric block is formed in the opening. At least one first via is formed through the low-k dielectric block. A first conductor is formed in the first via.