logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10784357 B1

PDFFull Text
Date of Patent:
Sep. 22, 2020

Filed:

Jul. 17, 2018

Fabrication of vertical field effect transistor structure with controlled gate length

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kangguo Cheng, Schenectady, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Chun-Chen Yeh, Clifton Park, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Vazken Alexanian

Primary Examiner:

Jarrett J Stark

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41741 (2013.01); H01L 21/02266 (2013.01); H01L 21/28114 (2013.01); H01L 21/28123 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 29/42392 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66666 (2013.01); H01L 29/66787 (2013.01); H01L 29/7827 (2013.01); H01L 29/78618 (2013.01); H01L 29/78642 (2013.01); H01L 29/78696 (2013.01);
Abstract

A method of forming a gate structure, including forming one or more vertical fins on a substrate; forming a bottom spacer on the substrate surface adjacent to the one or more vertical fins; forming a gate structure on at least a portion of the sidewalls of the one or more vertical fins; forming a gauge layer on at least a portion of the bottom spacer, wherein the gauge layer covers at least a portion of the gate structure on the sidewalls of the one or more vertical fins; and removing a portion of the gauge layer on the bottom spacer.

Find Patent Forward Citations

Loading…