The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Dec. 21, 2018
Applicant:

Ningbo Semiconductor International Corporation, Ningbo, CN;

Inventors:

Hailong Luo, Ningbo, CN;

Clifford Ian Drowley, Ningbo, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/00 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/94 (2013.01); H01L 21/561 (2013.01); H01L 21/565 (2013.01); H01L 21/568 (2013.01); H01L 23/3121 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0652 (2013.01); H01L 25/50 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/80013 (2013.01); H01L 2224/80896 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06582 (2013.01); H01L 2924/0534 (2013.01); H01L 2924/0545 (2013.01); H01L 2924/05432 (2013.01); H01L 2924/05442 (2013.01);
Abstract

Wafer level package structures and packaging methods are provided. An exemplary method includes providing a device wafer having a first front surface and a first back surface opposing the first front surface, wherein at least one first chip is integrated in the first front surface; forming a first oxide layer on the first front surface of the device wafer; providing at least one second chip having a to-be-bonded surface; forming a second oxide layer on the to-be-bonded surface of each second chip; providing a carrier wafer; temporally bonding a surface of the second chip opposing the second oxide layer to the carrier wafer; forming an encapsulation layer on the carrier wafer between adjacent second chips of the at least one second; and bonding the device wafer and the second chip by bonding the first oxide layer with the second oxide layer by a low-temperature fusion bonding process.


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