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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10784226 B1

PDFFull Text
Date of Patent:
Sep. 22, 2020

Filed:

May. 30, 2019

Semiconductor device

Applicant:

Shinko Electric Industries Co., Ltd., Nagano-shi, Nagano-ken, JP;

Inventor:

Kei Murayama, Nagano, JP;

Assignee:

SHINKO ELECTRIC INDUSTRIES CO., LTD., , JP;

Attorney:

Tarolli, Sundheim, Covell & Tummino LLP

Primary Examiner:

S V Clark

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 24/29 (2013.01); H01L 21/4853 (2013.01); H01L 21/565 (2013.01); H01L 23/3121 (2013.01); H01L 23/49844 (2013.01); H01L 24/27 (2013.01); H01L 24/73 (2013.01); H01L 2224/27505 (2013.01); H01L 2224/29076 (2013.01); H01L 2224/29239 (2013.01); H01L 2224/29247 (2013.01); H01L 2224/29255 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A semiconductor device includes an insulative substrate, a wiring pattern, a bonding portion, and a semiconductor element. The wiring pattern is formed on an upper surface of the insulative substrate. The bonding portion is formed on an upper surface of the wiring pattern. The semiconductor element includes an electrode pad connected to an upper surface of the bonding portion. The bonding portion includes first sintered layers distributed in the bonding portion and a second sintered layer having a density differing from each of the first sintered layers and surrounding the first sintered layer.

Find Patent Forward Citations

Murayama, Kei. (2020). Semiconductor device (U.S. Patent No. 10784226). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10784226

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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