The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Sep. 04, 2018
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Chia Hu, Taipei, TW;

Ching-Pin Yuan, Hsinchu, TW;

Sung-Feng Yeh, Taipei, TW;

Sen-Bor Jan, Tainan, TW;

Ming-Fa Chen, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/544 (2006.01); H01L 25/065 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 24/06 (2013.01); H01L 23/522 (2013.01); H01L 23/544 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/09 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05555 (2013.01); H01L 2224/05569 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/0612 (2013.01); H01L 2224/06051 (2013.01); H01L 2224/06132 (2013.01); H01L 2224/08121 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/091 (2013.01); H01L 2224/0913 (2013.01); H01L 2224/09051 (2013.01); H01L 2224/8001 (2013.01); H01L 2224/80011 (2013.01); H01L 2224/80013 (2013.01); H01L 2224/8013 (2013.01); H01L 2224/80132 (2013.01); H01L 2224/80203 (2013.01); H01L 2224/80357 (2013.01); H01L 2224/80815 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80905 (2013.01); H01L 2224/80986 (2013.01); H01L 2924/3511 (2013.01);
Abstract

A semiconductor device including a first die and a second die bonded to one another. The first die includes a first passivation layer over a substrate, and first bond pads in the first passivation layer. The second die includes a second passivation layer, which may be bonded to the first passivation layer, and second bond pads in the second passivation layer, which may be bonded to the first bond pads. The second bond pads include inner bond pads and outer bond pads. The outer bond pads may have a greater diameter than the inner bond pads as well as the first bond pads.


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