The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Jan. 17, 2019
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); C23C 16/14 (2006.01); C23C 16/34 (2006.01); C23C 16/56 (2006.01); C23C 16/44 (2006.01); C23C 16/52 (2006.01); C23C 16/02 (2006.01); H01L 21/768 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); C23C 16/0272 (2013.01); C23C 16/14 (2013.01); C23C 16/34 (2013.01); C23C 16/4408 (2013.01); C23C 16/52 (2013.01); C23C 16/56 (2013.01); H01L 21/28556 (2013.01); H01L 21/28088 (2013.01); H01L 21/76843 (2013.01); H01L 21/76876 (2013.01); H01L 21/76895 (2013.01);
Abstract
A tungsten film forming method in which a substrate having a TiN film formed thereon is disposed in a processing container and a tungsten film is formed above a surface of the substrate while heating the substrate in a reduced pressure atmosphere, includes forming a first film of an aluminum-containing material on the substrate and forming the tungsten film on the first film.