The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

May. 29, 2018
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Ryoken Ozawa, Joetsu, JP;

Takuro Kosaka, Joetsu, JP;

Yukio Inazuki, Joetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/32 (2012.01); G03F 1/54 (2012.01); G03F 1/58 (2012.01); G03F 1/50 (2012.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
G03F 1/32 (2013.01); G03F 1/50 (2013.01); G03F 1/54 (2013.01); G03F 1/58 (2013.01); H01L 21/0337 (2013.01);
Abstract

A photomask blank for an exposure light of ArF excimer laser, including a transparent substrate and a light-shielding film containing molybdenum, silicon, and nitrogen. The light-shielding film is formed in a single layer or a multilayer composed of a single composition layer or a composition gradient layer, a reflectance of the light-shielding film on a side remote from the substrate is 40% or less, and among the refractive indexes at the surfaces on the substrate side and the side remote from the substrate of all layers, a difference between the highest and lowest refractive indexes is 0.2 or less, and among the extinction coefficients at the surfaces, a difference between the highest and lowest extinction coefficients is 0.5 or less. The light-shielding film assumes a satisfactory and undeteriorated sectional shape of a mask pattern in an etching process in mask processing or defect correcting.


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