The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Mar. 04, 2019
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Kyungseok Ko, Gyeonggi-do, KR;
Hiromi Shima, Nirasaki, JP;
Eiji Kikama, Nirasaki, JP;
Keisuke Suzuki, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); C23C 16/34 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
C23C 16/345 (2013.01); C23C 16/45525 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02211 (2013.01); H01L 21/02329 (2013.01); H01L 21/67017 (2013.01); H01L 21/67109 (2013.01);
Abstract
There is provided a method of forming a predetermined film by alternately supplying a film-forming raw material gas and a reaction gas onto a workpiece by an atomic layer deposition (ALD), the method including: beginning an ALD-based film formation at a first temperature at which an adsorption of the film-forming raw material gas occurs; continuing the ALD-based film formation while increasing the first temperature; and completing the ALD-based film formation at a second temperature at which a decomposition of the film-forming raw material gas occurs.