The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2020

Filed:

Jan. 24, 2019
Applicant:

Rohm and Haas Electronic Materials Cmp Holdings, Inc., Newark, DE (US);

Inventors:

Yi Guo, Newark, DE (US);

David Mosley, Lafayette Hill, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/02 (2006.01); H01L 21/306 (2006.01); B24B 37/04 (2012.01); B24B 1/00 (2006.01); C09G 1/00 (2006.01); C09K 3/14 (2006.01); C09G 1/04 (2006.01); C09G 1/06 (2006.01); C09K 13/06 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); B24B 1/00 (2013.01); B24B 37/044 (2013.01); C09G 1/00 (2013.01); C09G 1/04 (2013.01); C09G 1/06 (2013.01); C09K 3/1454 (2013.01); C09K 3/1463 (2013.01); C09K 13/06 (2013.01); H01L 21/30625 (2013.01); H01L 21/3212 (2013.01);
Abstract

An acid chemical mechanical polishing composition includes colloidal silica abrasive particles having a positive zeta potential, and select alkoxysilane succinic acid anhydride compounds to enhance the reduction of defects on dielectric materials of substrates such as silicon dioxide and silicon nitride. Also disclosed are methods for polishing a substrate with the acid chemical mechanical polishing composition to remove some of the dielectric materials such as silicon dioxide and silicon nitride.


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