The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2020
Filed:
Oct. 01, 2018
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
En-Chiuan Liou, Tainan, TW;
Yu-Cheng Tung, Kaohsiung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 21/225 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/0217 (2013.01); H01L 21/02129 (2013.01); H01L 21/2256 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823468 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823864 (2013.01); H01L 27/0886 (2013.01); H01L 29/66803 (2013.01); H01L 21/823892 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, semiconductor fins; and a first fin bump between the semiconductor fins. The first fin bump includes a first sidewall spacer. The first sidewall spacer includes a solid-state dopant source layer and an insulating buffer layer.