The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2020

Filed:

May. 07, 2019
Applicant:

Elpis Technologies Inc., Ottawa, CA;

Inventors:

Charles L. Arvin, Poughkeepsie, NY (US);

Steven P. Ostrander, Poughkeepsie, NY (US);

Krishna R. Tunga, Wappingers Falls, NY (US);

Assignee:

ELPIS TECHNOLOGIES INC., Ottawa, Ontario, CA;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/367 (2006.01); H01L 23/373 (2006.01); H01L 21/48 (2006.01); F28F 21/08 (2006.01); H01L 23/42 (2006.01); H01L 23/10 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3675 (2013.01); F28F 21/085 (2013.01); F28F 21/087 (2013.01); F28F 21/089 (2013.01); H01L 21/4882 (2013.01); H01L 23/3736 (2013.01); F28F 2265/26 (2013.01); H01L 23/10 (2013.01); H01L 23/42 (2013.01); H01L 2924/14 (2013.01);
Abstract

A multipart lid is provided. The multipart lid may include a formed upper lid designed for maximum heat dissipation, a coined lower lid joined to the formed upper lid, where the coined lower lid comprises a coefficient of thermal expansion (CTE) substantially equal to a CTE of a first semiconductor component. A structure is provided. The structure may include a substrate, a first semiconductor component electrically connected and mounted on the substrate, one or more discrete components electrically connected and mounted on the substrate, a substrate mounted multipart lid covering both the semiconductor component and the one or more discrete components, where the multipart lid comprises a heat dissipating upper lid and a lower lid, where a coefficient of thermal expansion (CTE) of the lower lid substantially matches a CTE of the first semiconductor component.


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