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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10763178 B1

PDFFull Text
Date of Patent:
Sep. 01, 2020

Filed:

Nov. 20, 2018

Semiconductor device structure

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Ming-Heng Tsai, Taipei, TW;

Chun-Sheng Liang, Puyan Township, TW;

Pei-Lin Wu, Kaohsiung, TW;

Yi-Ren Chen, Taoyuan, TW;

Shih-Hsun Chang, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Eric A Ward

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 29/08 (2006.01); H01L 29/161 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823814 (2013.01); H01L 21/823418 (2013.01); H01L 21/823425 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/42368 (2013.01); H01L 29/4966 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01);
Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a gate stack over the substrate. The gate stack has a first upper portion and a first lower portion, and the first upper portion is wider than the first lower portion. The semiconductor device structure includes a spacer layer surrounding the gate stack. The spacer layer has a second upper portion and a second lower portion. The second upper portion is thinner than the second lower portion.

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