The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Sep. 17, 2018
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Haitao Liu, Boise, ID (US);
Yunfei Gao, Boise, ID (US);
Kamal M. Karda, Boise, ID (US);
Deepak Chandra Pandey, Boise, ID (US);
Sanh D. Tang, Boise, ID (US);
Litao Yang, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78642 (2013.01); H01L 27/0886 (2013.01); H01L 29/7831 (2013.01); H01L 29/7842 (2013.01); H01L 29/7851 (2013.01);
Abstract
Systems, apparatuses and methods related to access devices formed with conductive contacts are described. An example apparatus may include an access device that includes a field-effect transistor (FET). A vertical pillar may be formed to include a channel of the FET, with a portion of the vertical pillar formed between at least two gates of the FET (i.e., a multi-gate Fin-FET). A conductive contact may be coupled to a body region of the vertical pillar.