The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Mar. 12, 2018
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Zhaoxu Shen, Shanghai, CN;
Duohui Bei, Shanghai, CN;
Abstract
A method of manufacturing a semiconductor device includes providing a substrate structure including a substrate and a semiconductor column vertically protruding from the substrate, sequentially forming a first protective layer and a second protective layer on the substrate, etching a portion of the second protective layer to expose a portion of the first protective layer on the substrate and a portion of the first protective layer on an upper surface of the semiconductor column, removing the exposed portion of the first protective layer on the substrate to expose a lower portion of the semiconductor column, removing a remaining portion of the second protective layer, and forming a first contact material layer on the substrate and in contact with the lower portion of the semiconductor column. The first contact material layer in contact with the lower portion of the semiconductor column does not increase the source series resistance.